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Proceedings Paper

Experimental study of proximity effect corrections in electron-beam lithography
Author(s): Jianguo Zhu; Zheng Cui; Philip D. Prewett
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Paper Abstract

The computer aided proximity effect correction program CAPROX has been used to correct structures written at 20 keV electron beam energy. A new method has been developed to determine proximity parameters for a given e-beam/resist/substrate system. Proximity parameters for PMMA and EBR-9 and chemically amplified negative resist AZPN114 have been determined, and compared with those obtained from the established 'doughnut method'. The new method provides more reliable and accurate values, particularly for the forward scattering range. The dependence of (alpha) , (beta) and (eta) on resist thickness was also measured and the sensitivity of proximity correction using CAPROX to variation in all three scattering parameters was demonstrated. The new method improves CD linewidth linearity and accuracy in the range 0.1 approximately equals 4.0 micrometers , achieving linewidth for both lines and gaps within 100 nm of designed size.

Paper Details

Date Published: 19 May 1995
PDF: 8 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209175
Show Author Affiliations
Jianguo Zhu, Rutherford Appleton Lab. (United Kingdom)
Zheng Cui, Rutherford Appleton Lab. (United Kingdom)
Philip D. Prewett, Rutherford Appleton Lab. (United Kingdom)

Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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