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Proceedings Paper

Focused ion beam deposition of new materials: dielectric films for device modification and mask repair and tantalum films for x-ray mask repair
Author(s): Diane K. Stewart; Andrew F. Doyle; J. David Casey Jr.
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Paper Abstract

Two processes have been developed to enable both focused ion beam (FIB) repair of advanced masks and FIB device modification. Silicon dioxide- based films can be deposited by rastering a focused ion beam across a surface onto which a combination of siloxane and oxygen gases have been adsorbed. The deposited material exhibits sufficient dielectric strength to be used for FIB modification of devices. Applications of FIB dielectric deposition include: (1) Local passivation. (2) Backfilling vias to allow for probing buried metal layers without contacting exposed metal layers. (3) Electrical isolation between crossed metal lines. (4) Optically transparent films for phase shift mask repair. In the first half of this paper we discuss the gas delivery system, and the material and electrical characteristics of the films, as well as describing typical device modifications using FIB dielectric films. In the second half of the paper we describe a process for deposition of tantalum- containing films using a tantalum-based organometallic precursor for repair of clear defect on X-ray masks. Although FIB gold films are adequate for repair of gold-absorber, silicon-membrane X-ray masks, gold films are not acceptable in the fab line, and tantalum is preferred for repair of either tungsten or tantalum absorber X-ray masks.

Paper Details

Date Published: 19 May 1995
PDF: 8 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209163
Show Author Affiliations
Diane K. Stewart, Micrion Corp. (United States)
Andrew F. Doyle, Micrion Corp. (United States)
J. David Casey Jr., Micrion Corp. (United States)

Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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