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Proceedings Paper

Performance of IBM's EL-4 e-beam lithography system
Author(s): James D. Rockrohr; R. Butsch; W. A. Enichen; Michael S. Gordon; Timothy R. Groves; John G. Hartley; Hans C. Pfeiffer
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Paper Abstract

IBM's latest electron beam mask maker, EL-4, is online at IBM's Advanced Mask Facility (AMF) in Essex Junction, Vermont. The EL-4 system is a 75KV shaped beam lithography system utilizing a Variable Axis Immersion Lens (VAIL) designed to produce 1X or NX masks for 0.25 micrometers lithography ground rules, extendable to 0.13 micrometers . It is currently producing NIST-style X-ray membrane masks with pattern sizes over 30 X 30 mm2. This paper will give a brief description of the EL-4 tool and its operating features, specific measures used to enhance tool stability and accuracy, and measurement data from masks recently produced on the tool.

Paper Details

Date Published: 19 May 1995
PDF: 8 pages
Proc. SPIE 2437, Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V, (19 May 1995); doi: 10.1117/12.209156
Show Author Affiliations
James D. Rockrohr, IBM Microelectronics (United States)
R. Butsch, IBM Microelectronics (United States)
W. A. Enichen, IBM Microelectronics (United States)
Michael S. Gordon, IBM Microelectronics (United States)
Timothy R. Groves, IBM Microelectronics (United States)
John G. Hartley, IBM Microelectronics (United States)
Hans C. Pfeiffer, IBM Microelectronics (United States)

Published in SPIE Proceedings Vol. 2437:
Electron-Beam, X-Ray, EUV, and Ion-Beam Submicrometer Lithographies for Manufacturing V
John M. Warlaumont, Editor(s)

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