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Proceedings Paper

Self-aligned resonant tunneling-diode finger structure for high cut-off frequency and device integration
Author(s): Xiao J. Song; Jinbo Kuang; William J. Schaff; Paul J. Tasker; Kimiyoshi Yamasaki; Lester Fuess Eastman
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Paper Abstract

Planar, interdigitated In0.53Ga0.47As/GaAs finger structure resonant tunneling diodes (RTDs) have been successfully fabricated on the semi-insulating InP substrate by using a novel self-alignment and air-bridge technique. This design significantly reduces the parasitic series resistance, increases the oscillation frequency, and reduces the power loss. The front-side contact scheme also enables the monolithic integration of the RTDs in series to achieve multiple negative differential resistances.

Paper Details

Date Published: 1 August 1990
PDF: 9 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20914
Show Author Affiliations
Xiao J. Song, Cornell Univ. (United States)
Jinbo Kuang, Cornell Univ. (United States)
William J. Schaff, Cornell Univ. (United States)
Paul J. Tasker, Cornell Univ. (Germany)
Kimiyoshi Yamasaki, NTT Corp. (Japan)
Lester Fuess Eastman, Cornell Univ. (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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