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GaAs heterojunction bipolar transistor device and IC technology for high-performance analog/microwave, digital, and A/D conversion applications
Author(s): Michael E. Kim
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Paper Abstract

This paper discusses the non-saturating GaAs/AlGaAs N-p-n heterojunction bipolar transistor (GaAs HBT) technology and circuit applications where the GaAs HBT offers unique advantages. A relaxed 2-3 ?m emitter self-aligned HBT IC process and molecular beam epitaxial structure developed at TRW for producibility, permit simultaneous fp, fmax ? 30-60 GHz, dc current gain ??50-100, and MSI-LSI integration levels. It is used as a vehicle for demonstrating initial technology capabilities including dc to 20 GHz analog/microwave, 3-6 GHz digital, and 1-3 GHz analog/digital conversion, as well as monolithically- combined functions. Significant improvements are realized over advanced Si bipolar and GaAs field-effect transistor approaches in combinations of operational frequency, power consumption, gain-bandwidth product, harmonic distortion, phase (1/f) noise, and radiation hardness. These capabilities along with the GaAs HBT technology’s extensive growth potential should assure its future competitiveness as well as its expanding role in achieving more efficient system functions.

Paper Details

Date Published: 1 August 1990
PDF: 12 pages
Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); doi: 10.1117/12.20903
Show Author Affiliations
Michael E. Kim, TRW, Inc. (United States)

Published in SPIE Proceedings Vol. 1288:
High-Speed Electronics and Device Scaling
Lester Fuess Eastman, Editor(s)

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