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Proceedings Paper

Single-crystal silicon beams formed by merged epitaxial lateral overgrowth (MELO) for optical reflectors
Author(s): Gerold W. Neudeck; Abul Ehsanul Kabir
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Paper Abstract

Single crystalline silicon has very well known and predictable mechanical, optical, and electrical properties and is easily manufactured with consistent results. It is also integrated circuit compatible and leads to incorporation of circuits and high quality piezoresistors which are available to monitor motion for self-testing. We present for the first time a novel surface micro-machining process using merged epitaxial lateral overgrowth (MELO) silicon to demonstrate the fabrication of single crystal silicon, free standing cantilever beams 1 mm long and 5 micrometers X 10 micrometers in cross section. These beams had no evidence of stress related bending and were free from the substrate, returning to its original position after numerous electrostatic deflections. MELO has also shown great potential for advanced BJT and MOSFET device applications, hence active devices can be incorporated into the deflecting beam arrays. Diodes fabricated in the beams show excellent characteristics with average ideality factors of 1.01. Note that the technology permits adding of single crystal silicon to selected areas, hence it is an additive process as compared to traditional subtractive methods that deposit films over the entire wafer.

Paper Details

Date Published: 12 May 1995
PDF: 8 pages
Proc. SPIE 2383, Micro-Optics/Micromechanics and Laser Scanning and Shaping, (12 May 1995); doi: 10.1117/12.209016
Show Author Affiliations
Gerold W. Neudeck, Purdue Univ. (United States)
Abul Ehsanul Kabir, National Semiconductor Corp. (United States)

Published in SPIE Proceedings Vol. 2383:
Micro-Optics/Micromechanics and Laser Scanning and Shaping
M. Edward Motamedi; Leo Beiser, Editor(s)

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