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Proceedings Paper

Study of Si-coupled superconducting FETs using microfabrication technologies
Author(s): Mutsuko Hatano; Toshikazu Nishino; Haruhiro Hasegawa; Fumio Murai; Tokuo Kure; Hideaki Nakane
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Paper Abstract

The coherence length in Si is estimated by the measurements of the Nb-Si bilayer superconducting transition temperature and the Nb-Si-Nb weak link superconducting critical current. The coherence length is shown to increase with an increase in the carrier concentration n as a function of n"3 . This result agreed with the numerical result derived from the Seto-Van Duzer's theory. The change in pair potential for the Al-Nb proximity system can be reconstructed by measuring the dependence of differential resistance on incident energy and the bound state levels using lithographic point-contact on Al-Nb bilayer.

Paper Details

Date Published: 1 October 1990
PDF: 8 pages
Proc. SPIE 1287, High Tc Superconductivity: Thin Films and Applications, (1 October 1990); doi: 10.1117/12.20887
Show Author Affiliations
Mutsuko Hatano, Hitachi, Ltd. (United States)
Toshikazu Nishino, Hitachi, Ltd. (Japan)
Haruhiro Hasegawa, Hitachi, Ltd. (Japan)
Fumio Murai, Hitachi, Ltd. (Japan)
Tokuo Kure, Hitachi, Ltd. (Japan)
Hideaki Nakane, Hitachi, Ltd. (Japan)

Published in SPIE Proceedings Vol. 1287:
High Tc Superconductivity: Thin Films and Applications
Cheng-Chung John Chi; R. Bruce van Dover, Editor(s)

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