Share Email Print

Proceedings Paper

Developments in electroreflectance lineshape theory
Author(s): Richard A. Batchelor; Andrew Hamnett
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

The electroreflectance lineshapes of 111/V semiconductors are modelled using the intermediate field theory and a multilayer reflection routine to include electric field variation. This introduces additional structure into the lineshape, which has previously been assumed to be from impurity or exciton effects. By using a thermal broadening parameter of F0=O.OO9eV we show that spectrum size as well as shape can be fitted successfully to experimental data so that depletion layer voltages can be measured.

Paper Details

Date Published: 1 August 1990
PDF: 11 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20876
Show Author Affiliations
Richard A. Batchelor, Inorganic Chemistry Lab. (United Kingdom)
Andrew Hamnett, Univ. of Newcastle upon Tyne (United Kingdom)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?