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Proceedings Paper

Investigating deprotection-induced shrinkage and retro-grade sidewalls in NTD resists
Author(s): Thomas V. Pistor; Chenchen Wang; Yan Wang; Lei Yuan; Jongwook Kye; Yixu Wu; Sohan Mehta; Paul Ackmann
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Paper Abstract

Two aspects of NTD resists, deprotection-induced shrinkage, and retrograde sidewalls, are investigated through experimentation and simulation.

Simulation predicts that NTD resist profiles should often have retrograde sidewall angles due to the attenuation of light as it propagates down through the resist. Resist shrinkage induced from both the de-protection during PEB and from exposure to electrons during SEM can cause CD and sidewall changes. The interplay between the shrinkage and the retrograde sidewalls is discussed.

Deprotection-induced shrinkage is measured by AFM while SEM induced shrinkage is estimated from repeated SEM measurements. SEM images for various features are analyzed and compared to simulation.

Paper Details

Date Published: 18 March 2015
PDF: 9 pages
Proc. SPIE 9426, Optical Microlithography XXVIII, 94260T (18 March 2015); doi: 10.1117/12.2087376
Show Author Affiliations
Thomas V. Pistor, Panoramic Technology Inc. (United States)
Chenchen Wang, GLOBALFOUNDRIES Inc. (United States)
Yan Wang, GLOBALFOUNDRIES Inc. (United States)
Lei Yuan, GLOBALFOUNDRIES Inc. (United States)
Jongwook Kye, GLOBALFOUNDRIES Inc. (United States)
Yixu Wu, GLOBALFOUNDRIES Inc. (United States)
Sohan Mehta, GLOBALFOUNDRIES Inc. (United States)
Paul Ackmann, GLOBALFOUNDRIES Inc. (United States)

Published in SPIE Proceedings Vol. 9426:
Optical Microlithography XXVIII
Kafai Lai; Andreas Erdmann, Editor(s)

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