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Proceedings Paper

Finding practical phenomenological models that include both photoresist behavior and etch process effects
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Paper Abstract

For more than five decades, the semiconductor industry has overcome technology challenges with innovative ideas that have continued to enable Moore’s Law. It is clear that multi-patterning lithography is vital for 20nm half pitch using 193i. Multi-patterning exposure sequences and pattern multiplication processes can create complicated tolerance accounting due to the variability associated with the component processes. It is essential to ensure good predictive accuracy of compact etch models used in multipatterning simulation. New modelforms have been developed to account for etch bias behavior at 20 nm and below. The new modeling components show good results in terms of global fitness and some improved predication capability for specific features. We’ve also investigated a new methodology to make the etch model aware of 3D resist profiles.

Paper Details

Date Published: 17 March 2015
PDF: 8 pages
Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280I (17 March 2015); doi: 10.1117/12.2087096
Show Author Affiliations
Sunwook Jung, Mentor Graphics (Korea, Republic of)
Thuy Do, Mentor Graphics (United States)
John Sturtevant, Mentor Graphics (United States)


Published in SPIE Proceedings Vol. 9428:
Advanced Etch Technology for Nanopatterning IV
Qinghuang Lin; Sebastian U. Engelmann; Ying Zhang, Editor(s)

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