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Proceedings Paper

Challenges and mitigation strategies for resist trim etch in resist-mandrel based SAQP integration scheme
Author(s): Nihar Mohanty; Elliott Franke; Eric Liu; Angelique Raley; Jeffrey Smith; Richard Farrell; Mingmei Wang; Kiyohito Ito; Sanjana Das; Akiteru Ko; Kaushik Kumar; Alok Ranjan; David O'Meara; Kenjiro Nawa; Steven Scheer; Anton DeVillers; Peter Biolsi
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Paper Abstract

Patterning the desired narrow pitch at 10nm technology node and beyond, necessitates employment of either extreme ultra violet (EUV) lithography or multi-patterning solutions based on 193nm-immersion lithography. With enormous challenges being faced in getting EUV lithography ready for production, multi-patterning solutions that leverage the already installed base of 193nm-immersion-lithography are poised to become the industry norm for 10 and 7nm technology nodes. For patterning sub-40nm pitch line/space features, self-aligned quadruple patterning (SAQP) with resist pattern as the first mandrel shows significant cost as well as design benefit, as compared to EUV lithography or other multi-patterning techniques. One of the most critical steps in this patterning scheme is the resist mandrel definition step which involves trimming / reformation of resist profile via plasma etch for achieving appropriate pitch after the final pattern. Being the first mandrel, the requirements for the Line Edge Roughness (LER) / Line Width Roughness (LWR); critical dimension uniformity (CDU); and profile in 3-dimensions for the resist trim / reformation etch is extremely aggressive.

In this paper we highlight the unique challenges associated in developing resist trim / reformation plasma etch process for SAQP integration scheme and summarize our efforts in optimizing the trim etch chemistries, process steps and plasma etch parameters for meeting the mandrel definition targets. Finally, we have shown successful patterning of 30nm pitch patterns via the resist-mandrel SAQP scheme and its implementation for Si-fin formation at 7nm node.

Paper Details

Date Published: 17 March 2015
PDF: 14 pages
Proc. SPIE 9428, Advanced Etch Technology for Nanopatterning IV, 94280G (17 March 2015); doi: 10.1117/12.2085016
Show Author Affiliations
Nihar Mohanty, TEL Technology Ctr., America, LLC (United States)
Elliott Franke, TEL Technology Ctr., America, LLC (United States)
Eric Liu, TEL Technology Ctr., America, LLC (United States)
Angelique Raley, TEL Technology Ctr., America, LLC (United States)
Jeffrey Smith, TEL Technology Ctr., America, LLC (United States)
Richard Farrell, TEL Technology Ctr., America, LLC (United States)
Mingmei Wang, TEL Technology Ctr., America, LLC (United States)
Kiyohito Ito, TEL Technology Ctr., America, LLC (United States)
Sanjana Das, TEL Technology Ctr., America, LLC (United States)
Akiteru Ko, TEL Technology Ctr., America, LLC (United States)
Kaushik Kumar, TEL Technology Ctr., America, LLC (United States)
Alok Ranjan, TEL Technology Ctr., America, LLC (United States)
David O'Meara, TEL Technology Ctr., America, LLC (United States)
Kenjiro Nawa, TEL Technology Ctr., America, LLC (Japan)
Steven Scheer, TEL Technology Ctr., America, LLC (United States)
Anton DeVillers, TEL Technology Ctr., America, LLC (United States)
Peter Biolsi, TEL Technology Ctr., America LLC (United States)


Published in SPIE Proceedings Vol. 9428:
Advanced Etch Technology for Nanopatterning IV
Qinghuang Lin; Sebastian U. Engelmann; Ying Zhang, Editor(s)

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