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Proceedings Paper

Mid-infrared semiconductor lasers with GaInSb/InAs type-II superlattices
Author(s): Alan R. Kost; David H. Chow; Tom C. Hasenberg; Richard H. Miles; L. West
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Paper Abstract

We demonstrate midwave infrared (MID-IR) diode lasers that span most of the 3 - 4 micrometers range. Laser active regions are multiple quantum well (MQW) structures with GaInSb/InAs, type-II, broken gap superlattices for the wells and GaInAsSb for the barriers. The superlattice constituents and dimensions were tailored to reduce losses from auger recombination. AlSb/InAs superlattices are used for both n-type and p-type laser cladding regions.

Paper Details

Date Published: 28 April 1995
PDF: 6 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208460
Show Author Affiliations
Alan R. Kost, Hughes Research Labs. (United States)
David H. Chow, Hughes Research Labs. (United States)
Tom C. Hasenberg, Hughes Research Labs. (United States)
Richard H. Miles, Hughes Research Labs. (United States)
L. West, Hughes Research Labs. (United States)

Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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