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Proceedings Paper

High-power diode-pumped mid-infrared semiconductor lasers
Author(s): Han Q. Le; George W. Turner; Hong K. Choi; Juan R. Ochoa; Antonio Sanchez; Jose M. Arias; Majid Zandian; Ricardo R. Zucca; Yet Zen Liu
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Paper Abstract

A number of double heterostructure and quantum well lasers with wavelengths approximately 3.1, 3.2, 3.4, 3.85 - 4.1, and 4.5 micrometers have been realized in InAsSb/GaSb and HgCdTe/CdZnTe material systems. Peak powers at the few W level and average power at the few hundred mW-level were obtained from optically pumped broad-area lasers at >= 80 K. Threshold, efficiency, internal loss, and gain saturation studies are reported. A compact laser package was built, using a high-power diode array for pumping and a Stirling pump for cooling. Its performance with a 4-micrometers laser is described.

Paper Details

Date Published: 28 April 1995
PDF: 9 pages
Proc. SPIE 2382, Laser Diodes and Applications, (28 April 1995); doi: 10.1117/12.208454
Show Author Affiliations
Han Q. Le, MIT Lincoln Lab. (United States)
George W. Turner, MIT Lincoln Lab. (United States)
Hong K. Choi, MIT Lincoln Lab. (United States)
Juan R. Ochoa, MIT Lincoln Lab. (United States)
Antonio Sanchez, MIT Lincoln Lab. (United States)
Jose M. Arias, Rockwell International Science Ctr. (United States)
Majid Zandian, Rockwell International Science Ctr. (United States)
Ricardo R. Zucca, Rockwell International Science Ctr. (United States)
Yet Zen Liu, Fermionics Corp. (United States)

Published in SPIE Proceedings Vol. 2382:
Laser Diodes and Applications
Kurt J. Linden; Prasad R. Akkapeddi, Editor(s)

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