Proceedings Paper
Differential reflectance spectroscopy of semiconductors| Format | Member Price | Non-Member Price |
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Paper Abstract
Differential reflectance (DR) spectroscopy, applied to semiconductors, is shown to be
equivalent in some cases to a contactless electro-reflectance technique. DR spectra are achieved by
modifying one half of the sample surface or, in the case of semiconductor alloys, just relying on the
inhomogeneities present. Our DR spectra of GaAs reveal sharp critical point structures and are
comparable to the known electro-reflectance data. The DR spectra show a marked improvement in
signal to noise ratio over photoreflectance spectra of the same samples. This new technique has also
been used to characterize 111-V quantum well structures.
Paper Details
Date Published: 1 August 1990
PDF: 10 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990);
Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)
PDF: 10 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990);
Show Author Affiliations
Michael Gal, Univ. of New South Wales (Australia)
Chit Shwe, Univ. of New South Wales (Burma)
John Tann, Univ. of New South Wales (Australia)
Chit Shwe, Univ. of New South Wales (Burma)
John Tann, Univ. of New South Wales (Australia)
P. McMillan, Univ. of New South Wales (Australia)
Mark Gross, Univ. of New South Wales (Australia)
R. Shi, Univ. of New South Wales (Australia)
Mark Gross, Univ. of New South Wales (Australia)
R. Shi, Univ. of New South Wales (Australia)
Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)
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