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Proceedings Paper

Spectral ellipsometry of semiconductors and semiconductor structures
Author(s): Luis Vina; Miquel Garriga; Manuel Cardona
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Paper Abstract

Spectral ellipsornetry has been proven to be a very powerful tool to study the band structure and electronic properties of semiconductors. Line-shape analysis of the derivative spectra of the pseudo-dielectric function allows a precise determination of critical point parameters, such as amplitudes, energies, broadening and excitonic phase angles. Here we will review the application of the technique, showing examples of the effects of temperature, alloy and doping in the band structure of semiconductors and the effects of a new periodicity along the growth direction in semiconductor structures.

Paper Details

Date Published: 1 August 1990
PDF: 14 pages
Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); doi: 10.1117/12.20842
Show Author Affiliations
Luis Vina, Univ. Autonoma (United States)
Miquel Garriga, Max-Planck-Institut fuer Festk (Spain)
Manuel Cardona, Max-Planck-Institut fuer Festkoerperforschung (Germany)

Published in SPIE Proceedings Vol. 1286:
Modulation Spectroscopy
Fred H. Pollak; Manuel Cardona; David E. Aspnes, Editor(s)

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