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Proceedings Paper

A new mask exposure and analysis facility
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Paper Abstract

The introduction of ever higher source powers in EUV systems causes increased risks for contamination and degradation of EUV masks and pellicles. Appropriate testing can help to inventory and mitigate these risks. To this end, we propose EBL2: a laboratory EUV exposure system capable of operating at high EUV powers and intensities, and capable of exposing and analyzing EUV masks. The proposed system architecture is similar to the EBL system which has been operated jointly by TNO and Carl Zeiss SMT since 2005. EBL2 contains an EUV Beam Line, in which samples can be exposed to EUV irradiation in a controlled environment. Attached to this Beam Line is an XPS system, which can be reached from the Beam Line via an in-vacuum transfer system. This enables surface analysis of exposed masks without breaking vacuum. Automated handling with dual pods is foreseen so that exposed EUV masks will still be usable in EUV lithography tools to assess the imaging impact of the exposure. Compared to the existing system, large improvements in EUV power, intensity, reliability, and flexibility are proposed. Also, in-situ measurements by e.g. ellipsometry is foreseen for real time monitoring of the sample condition. The system shall be equipped with additional ports for EUVR or other analysis tools. This unique facility will be open for external customers and other research groups.

Paper Details

Date Published: 8 October 2014
PDF: 6 pages
Proc. SPIE 9235, Photomask Technology 2014, 92351F (8 October 2014); doi: 10.1117/12.2083713
Show Author Affiliations
Edwin te Sligte, TNO (Netherlands)
Norbert Koster, TNO (Netherlands)
Alex Deutz, TNO (Netherlands)
Wilbert Staring, TNO (Netherlands)

Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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