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Proceedings Paper

Design and analysis of AlGaInP-based light emitting diodes with SiO2 current blocking layer
Author(s): Li Ma; Guang-di Shen; Chen Xu; Zhi-Yuan Gao
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Paper Abstract

In this study, the fabrication and characterization of AlGaInP-based light-emitting diodes (LEDs) with further improvement by the design of a SiO2 current blocking layer were described. It was found that with the SiO2 CBL, the injected current can be forced to spread outside instead of flowing directly downward under the p-pad electrode. At 20mA, as compared to traditional LEDs, the optical output power for novel LEDs is increased by about 30%. We found that the novel LEDs have better saturation characteristics, this improvement is contributed to more uniform of injection current and less heat generation in the novel LED chips.

Paper Details

Date Published: 19 February 2015
PDF: 6 pages
Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94491R (19 February 2015); doi: 10.1117/12.2083261
Show Author Affiliations
Li Ma, Beijing Univ. of Technology (China)
Guang-di Shen, Beijing Univ. of Technology (China)
Chen Xu, Beijing Univ. of Technology (China)
Zhi-Yuan Gao, Beijing Univ. of Technology (China)

Published in SPIE Proceedings Vol. 9449:
The International Conference on Photonics and Optical Engineering (icPOE 2014)
Ailing Tian; Anand Asundi; Weiguo Liu; Chunmin Zhang, Editor(s)

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