In this study, the fabrication and characterization of AlGaInP-based light-emitting diodes (LEDs) with further improvement by the design of a SiO2 current blocking layer were described. It was found that with the SiO₂ CBL, the injected current can be forced to spread outside instead of flowing directly downward under the p-pad electrode. At 20mA, as compared to traditional LEDs, the optical output power for novel LEDs is increased by about 30%. We found that the novel LEDs have better saturation characteristics, this improvement is contributed to more uniform of injection current and less heat generation in the novel LED chips.

Date Published: 19 February 2015
PDF: 6 pages
Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94491R (19 February 2015); doi: 10.1117/12.2083261

Published in SPIE Proceedings Vol. 9449:
The International Conference on Photonics and Optical Engineering (icPOE 2014)
Ailing Tian; Anand Asundi; Weiguo Liu; Chunmin Zhang, Editor(s)