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Proceedings Paper

Concepts for long wavelength VCSELs above 2 µm
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Paper Abstract

We present different concepts for long wavelength buried tunnel junction VCSELs for the spectroscopically important range above 2 μm. This includes GaSb-based laser using GaInAsSb quantum wells, InP-based lasers with V-shaped quantum wells and InP-based lasers using type-II quantum wells. For InP-based devices, emission wavelengths up to 2.36 μm are presented, with single-mode output powers of roughly 500 μW and side-mode suppression ratios of more than 30 dB. GaSb-based VCSELs are presented with single-mode emission at 2.6 μm, a side-mode suppression ratio of more than 20 dB and a peak output power of 400 μW.

Paper Details

Date Published: 4 March 2015
PDF: 7 pages
Proc. SPIE 9381, Vertical-Cavity Surface-Emitting Lasers XIX, 938105 (4 March 2015); doi: 10.1117/12.2083218
Show Author Affiliations
Stephan Sprengel, Technische Univ. München (Germany)
Markus-Christian Amann, Technische Univ. München (Germany)

Published in SPIE Proceedings Vol. 9381:
Vertical-Cavity Surface-Emitting Lasers XIX
Chun Lei; Kent D. Choquette, Editor(s)

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