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Proceedings Paper

Measurement of the phase defect size using scanning probe microscope and at-wavelength inspection tool
Author(s): Tsuyoshi Amano; Tsukasa Abe
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Paper Abstract

Predicting the lithographic impact of a phase defect, that is embedded in an Extreme Ultraviolet (EUV) mask, on a wafer printed image is one of the most challenging tasks. In this study, to characterize the phase defects, two types of measurement tools were employed and the data thus obtained from them were then evaluated for comparisons. One measurement tool was a scanning probe microscope used for measuring the surface topography of phase defects, and the other one was an at-wavelength dark-field inspection tool capable of capturing phase defect and then calculating the defect detection signal intensity (DSI) from those images. A programmed phase defect mask with various lateral sizes and depths was prepared. The sizes and DSIs were then measured. The measured data indicated that the DSIs did not directly correlate with the phase defect volumes. The influence of the phase defects on a wafer printed images was also calculated using a lithography simulator. The calculated results indicated that the printed critical dimensions (CDs) were strongly correlated with the DSIs rather than with the phase defect volumes. As a result, the influence of the phase defect on the printed CD can be predicted from the values of the DSIs.

Paper Details

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94221Z (13 March 2015); doi: 10.1117/12.2083186
Show Author Affiliations
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsukasa Abe, Dainippon Screen Manufacturing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood II; Eric M. Panning, Editor(s)

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