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Proceedings Paper

Molecular beam epitaxy: a path to novel high Tc superconductors?
Author(s): Darrell G. Schlom; J. N. Eckstein; Ivan Bozovic; Zongjian Chen; A. F. Marshall; K. E. von Dessonneck; James S. Harris Jr.
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Paper Abstract

The molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O films is reported. The advantage of using ozone rather than molecular oxygen for the growth of cuprate superconductors by molecular beam epitaxy (MBE) is discussed. Molecular beams of the constituent metals were shuttered on an atomic layer-by-layer basis to grow Bi2Sr2Ca1CuO phases for n=1 to 5, and ordered superlattices of these phases. Using these techniques an as-grown superconducting film with ]nset near 100 K and T (p=O) of 84 K was achieved. The films are smooth on an atomic scale. The results demonstrate the ability of shuttered MBE to grow custom layered combinations of Bi2Sr2Ca..1CuO layers. This shuttered MBE growth technique seems quite capable of synthesizing artificially layered epitaxial structures consisting of layers of oxides that are superconducting, non-superconducting metals, semiconducting, or insulating, with control of layer thickness and abruptness on an atomic scale.

Paper Details

Date Published: 1 October 1990
PDF: 14 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20831
Show Author Affiliations
Darrell G. Schlom, Stanford Univ. (United States)
J. N. Eckstein, Varian Research Ctr. (United States)
Ivan Bozovic, Varian Research Ctr. (United States)
Zongjian Chen, Stanford Univ. (United States)
A. F. Marshall, Stanford Univ. (United States)
K. E. von Dessonneck, Varian Research Ctr. (United States)
James S. Harris Jr., Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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