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Proceedings Paper

Vertical thinking in blue light emitting diodes: GaN-on-graphene technology
Author(s): C. Bayram; J. Kim; C.-W. Cheng; J. Ott; K. B. Reuter; S. W. Bedell; D. K. Sadana; H. Park; C. Dimitrakopoulos
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Paper Abstract

In this work, we show that a 2D cleave layer (such as epitaxial graphene on SiC) can be used for precise release of GaNbased light emitting diodes (LEDs) from the LED-substrate interface. We demonstrate the thinnest GaN-based blue LED and report on the initial electrical and optical characteristics. Our LED device employs vertical architecture: promising excellent current spreading, improved heat dissipation, and high light extraction with respect to the lateral one. Compared to conventional LED layer release techniques used for forming vertical LEDs (such as laser-liftoff and chemical lift-off techniques), our process distinguishes itself with being wafer-scalable (large area devices are possible) and substrate reuse opportunity.

Paper Details

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93641C (13 March 2015); doi: 10.1117/12.2082897
Show Author Affiliations
C. Bayram, Univ. of Illinois at Urbana-Champaign (United States)
J. Kim, IBM Thomas J. Watson Research Ctr. (United States)
C.-W. Cheng, IBM Thomas J. Watson Research Ctr. (United States)
J. Ott, IBM Thomas J. Watson Research Ctr. (United States)
K. B. Reuter, IBM Thomas J. Watson Research Ctr. (United States)
S. W. Bedell, IBM Thomas J. Watson Research Ctr. (United States)
D. K. Sadana, IBM Thomas J. Watson Research Ctr. (United States)
H. Park, Kyungpook National Univ. (Korea, Republic of)
C. Dimitrakopoulos, Univ. of Massachusetts Amherst (United States)

Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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