Our group previously explored methods for measuring simulation parameter for advanced chemically amplified (CA) resists, including development parameters ^[1]. Dill’s C parameter ^[2-3] , acid diffusion length generated from PAG ^[4], and de-protection reaction parameters ^[5-6]. We performed simulations of EUV resists using these parameters, the results of which allowed us to examine the conditions for reducing LER and improving resolution. This paper discusses a method for measuring the Dill’s B parameter, which had been difficult to measure with conventional methods. We also confirmed that enhancing the resist polymer’s EUV light absorption is effective in improving the sensitivity of the CA resist.

Date Published: 13 March 2015
PDF: 14 pages
Proc. SPIE 9422, Extreme Ultraviolet (EUV) Lithography VI, 94222L (13 March 2015); doi: 10.1117/12.2082883

Published in SPIE Proceedings Vol. 9422:
Extreme Ultraviolet (EUV) Lithography VI
Obert R. Wood II; Eric M. Panning, Editor(s)