Staring infrared focal plane arrays (FPAs) require pixel-level, three-dimensional (3D) integration with silicon readout integrated circuits (ROICs) that provide detector bias, integrate detector current, and may further process the signals. There is an increased interest in ROIC technology as a result of two trends in the evolution of infrared FPAs. The first trend involves decreasing the FPA pixel size, which leads to the increased information content within the same FPA die size. The second trend involves the desire to enhance signal processing capability at the FPA level, which opens the door to the detector behaving like a smart peripheral rather than a passive component—with complex signal processing functions being executed on, rather than off, the FPA chip. In this paper, we review recent advances in 3D integration process technologies that support these key trends in the development of infrared FPAs. Specifically, we discuss approaches in which the infrared sensor is integrated with 3D ROIC stacks composed of multiple layers of silicon circuitry interconnected using metal-filled through-silicon vias. We describe the continued development of the 3D integration technology and summarize key demonstrations that show its viability for pixels as small as 5 microns.

Date Published: 8 February 2015
PDF: 7 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93701L (8 February 2015); doi: 10.1117/12.2082877

Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)