Proceedings Paper
Plasma luminescence spectroscopy for sputtering growth of high Tc superconductors| Format | Member Price | Non-Member Price |
|---|---|---|
| $17.00 | $21.00 |
Paper Abstract
We present in situ. real-time monitoring of emission lines from rf
induced plasma of elemental and ionized species from target of
YBaCuO7_ compounds during the sputtering growth. Abundances of the
ionized and/or neutral species rather than clusters were observed
while relative composition of the species was varied by target
composition, applied rf power, gas pressure, and location of
substrate. We discuss usefulness of real time monitoring of ejected
species which depend on rf power and gas pressure during the
sputtering deposition of high Tc superconducting thin films.
Paper Details
Date Published: 1 October 1990
PDF: 8 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20828
Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)
PDF: 8 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20828
Show Author Affiliations
Sang Seop Yom, Korea Institute of Science and Technology (South Korea)
Yohee Kim, Korea Institute of Science and (South Korea)
Yohee Kim, Korea Institute of Science and (South Korea)
Sang Sam Choi, Korea Institute of Science and Technology (South Korea)
Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)
© SPIE. Terms of Use
