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Influence of rapid thermal annealing parameters on properties of YBaCuO thin films sputtered on silicon-based substrates
Author(s): Joseph M. Baixeras; Francois Carrie; Ferechteh Hosseini Teherani; Alain J. Kreisler
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Paper Abstract

In order to optimize the performances of YBaCuO thin films, elaborated by a two step process on Si02/Si3N4/Si substrates, we have studied the effect of rapid thermal annealing (FI'A) conditions on low temperature (i.e. < 200°C) sputtered layers, in the thickness range 0.3 - 1.5 gin. Both the superconduc- ting properties and the surface quality of the layers have been investigated. One of the advantages of this process is to allow the use of a very thin nitride layer (i.e. 45 A), to avoid the harmful diffusion of silicon from the wafer. This fast technique is also efficient to prevent interdiffusion between the silica and YBaCuO layers. Our first results show that an onset temperaure in the 87-91K range can been obtained, with 60 K and 'c 500 AOlfl (at T(R..0)/2). It is also shown that these figures might be improved by repeated RTA cycles.

Paper Details

Date Published: 1 October 1990
PDF: 13 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20827
Show Author Affiliations
Joseph M. Baixeras, Ecole Superieure d'Electricite (France)
Francois Carrie, Ecole Superieure d'Electricite (France)
Ferechteh Hosseini Teherani, Ecole Superieure d'Electricite (France)
Alain J. Kreisler, Ecole Superieure d'Electricite (France)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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