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Proceedings Paper

Effects of patterning and thermal annealing on the crystalline quality of GaAs grown on Si by MBE
Author(s): Naresh Chand; Sung-Nee G. Chu; Jan P. van der Ziel
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Paper Abstract

The defect reduction schemes in GaAs-on-Si such as: (1) Optimization of initial nucleation process; (2) inserting strained-layer superlattices for dislocation filtering; (3) thermal annealing, both in-situ and ex-situ; and (4) growth patterning are briefly reviewed and new data are presented. Spatially resolved photoluminescence (SRPL) images show that the material quality is significantly better when the (100) Si substrates are misoriented towards (oil) as compared to growth on (100) substrate or when the misorientation is towards (001). The post growth patterning to <15 jtm X 15 m patterns combined with thermal annealing at 850° C for > 15 mm eliminates the dark line defects in SRPL images and markedly reduces the thermally induced biaxial tensile stress in GaAs-on-Si. The technique is ideal for growth and fabrication of AlGaAs-GaAs vertical cavity surface emitting lasers on Si. In edge emitting lasers, where post-growth patterning alone does not significantly reduces the stress due to large cavity length, the tensile stress can be fully or over compensated by introduction of a compensating stress from a thermally deposited SiO2 layer. With the reduction of stress, stability of the lasers has been found to improve.

Paper Details

Date Published: 1 October 1990
PDF: 18 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20820
Show Author Affiliations
Naresh Chand, AT&T Bell Labs. (United States)
Sung-Nee G. Chu, AT&T Bell Labs. (United States)
Jan P. van der Ziel, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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