Proceedings Paper
Spontaneous selective epitaxial growth of compositionally modulated AlGaAs with an orientation-dependent band gap| Format | Member Price | Non-Member Price |
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Paper Abstract
We have demonstrated selective epitaxial growth of A1Gai_As, with an abrupt transition in the bandgap lateral
to the growth direction. Spontaneous compositional modulation, with an associated reduction in the effective
bandgap, occurs in AlGaAs grown by molecular beam epitaxy on the sides of grooves in a GaAs substrate. The
bandgap is observed to be dependent on the groove orientation. Possible mechanisms for the orientation dependent
growth are discussed.
Paper Details
Date Published: 1 October 1990
PDF: 12 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20819
Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)
PDF: 12 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20819
Show Author Affiliations
Michael E. Hoenk, California Institute of Technology (United States)
Kerry J. Vahala, California Institute of Technology (United States)
Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)
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