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Proceedings Paper

Formation of microstructures by selective wet-etching of amorphous As-S-Se thin films
Author(s): A. Bulanovs; J. Snikeris
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Paper Abstract

The present article is focused on the optical properties of amorphous As-S-Se thin films and chemical wet-etching in organic non-aqua amine-based solution. Different etching rates depending upon the sample exposure dose and etchant concentration were found. The maximum selective etching ratio 7:1 for samples was achieved. An interference method of in situ real-time monitoring of etching rate for the area with different exposure doses for the same sample was proposed. The efficiency of formation of relief gratings for amorphous As-S-Se thin films depending on the exposure dose was studied. Quality holographic gratings with diffraction efficiency (DE) of up to 65% were received. The results of the current study demonstrate an adequate etching selectivity for fabricating micro structures and possibility of practical application of amorphous chalcogenide thin films in holography and optical lithography.

Paper Details

Date Published: 22 October 2014
PDF: 7 pages
Proc. SPIE 9421, Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8), 942109 (22 October 2014); doi: 10.1117/12.2081451
Show Author Affiliations
A. Bulanovs, Daugavpils Univ. (Latvia)
J. Snikeris, Daugavpils Univ. (Latvia)

Published in SPIE Proceedings Vol. 9421:
Eighth International Conference on Advanced Optical Materials and Devices (AOMD-8)
Janis Spigulis, Editor(s)

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