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Proceedings Paper

Suppression of thermal carrier escape and enhanced two-step photon absorption in quantum-dot intermediate-band solar cells with a high-potential barrier
Author(s): S. Asahi; H. Teranishi; N. Kasamatsu; T. Kada; Toshiyuki Kaizu; T. Kita
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Paper Abstract

We have studied detailed carrier generation process in the two-step photon absorption and influence of thermal carrier escape in quantum-dot intermediate-band solar cells (QD-IBSC). The photocurrent created by the two-step photon absorption shows saturation as the inter-band excitation intensity becomes strong, and the inter-band excitation intensity showing the saturation behavior strongly depends on the inter-subband excitation intensity. To interpret this phenomenon, we carried out a theoretical simulation based on carrier dynamics considering carrier generation, energy relaxation and thermal carrier escape. The results indicate that the photocurrent saturation is caused by filling the intermediate states. The shift of the saturation point depending on the inter-subband excitation intensity is caused by the shift of the quasi-Fermi level for the intermediate states.

Paper Details

Date Published: 16 March 2015
PDF: 7 pages
Proc. SPIE 9358, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV, 93580X (16 March 2015); doi: 10.1117/12.2081302
Show Author Affiliations
S. Asahi, Kobe Univ. (Japan)
H. Teranishi, Kobe Univ. (Japan)
N. Kasamatsu, Kobe Univ. (Japan)
T. Kada, Kobe Univ. (Japan)
Toshiyuki Kaizu, Kobe Univ. (Japan)
T. Kita, Kobe Univ. (Japan)

Published in SPIE Proceedings Vol. 9358:
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IV
Alexandre Freundlich; Jean-François Guillemoles; Masakazu Sugiyama, Editor(s)

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