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Proceedings Paper

Chemical beam epitaxial growth of GaAs and InAs
Author(s): Tien-Heng H. Chiu; Alexander J. Robertson Jr.
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Paper Abstract

Growth characteristics of GaAs using triethyl-Ga (TEGa) and trimethyl-Ga (TMGa), and of InAs using trimethyl-In (ThIn) are found to be quite similar in many aspects. A reaction model in which the chemical kinetics of the adsorbed Ga alkyls dominates is able to account for the growth characteristics using TEGa throughout the entire growth temperature range. The existence of the intermediate species assumed in this model is confirmed by a recent mass spectroscopic study. This reaction model discussed here provides a microscopic understanding of the chemical beam epitaxial growth process.

Paper Details

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20812
Show Author Affiliations
Tien-Heng H. Chiu, AT&T Bell Labs. (United States)
Alexander J. Robertson Jr., AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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