In this paper we report recent developments on high power blue laser chips. Reduction of internal losses as well as optimized thermal management had been essential to increase optical output power. R and D samples with average performance of 3W optical output at junction temperatures of 130°C are demonstrated. The chips are suitable for use in a novel multi chip housing: For the first time up to 20 blue laser chips have been packaged into one compact housing resulting in the first InGaN laser device with optical output > 50W. The highly integrated package offers a unique small size. The outer dimensions of the package are 25.5mm x 35mm with an emitting surface of 16mm x 16.5mm. Therefore the complexity of optical alignment is dramatically reduced and only a single sheet multi lens array is required for beam collimation. Besides the unique technical performance the multi-die package offers significantly lower assembly costs because of the reduced complexity and assembly time. The butterfly package contains 4 bars with up to 5 multimode laser chips in series connection on each bar operating at 2.3A. The typical module wavelength is 450nm +/- 10nm. At a case temperature of 50°C the R and D samples achieve efficiencies of typ. 30% and an optical output power of 50W corresponding to an electrical power consumption of ~165W. This new technology can be used for high performance light engines of high brightness projectors.

Date Published: 13 March 2015
PDF: 8 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936318 (13 March 2015); doi: 10.1117/12.2081065

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)