Transition metal aluminides and gallides and rare earth monopnictides have been grown as buried conducting layers in 111-v compound semiconductor heterostructures. These metallic and semi-metallic compounds have the CsC1 and NaC1 structures, respectively. The criteria for achieving (100) oriented epitaxial growth on (100)111-V semiconductor surfaces are different for each class of material. The methods used to achieve 111-V/metal/Ill-V heteroepitaxial structures are described. The different approaches needed for the aluminides or gallides and the monopnictides form the basis for a comparative study.

Date Published: 1 October 1990
PDF: 10 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20810

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)