
Proceedings Paper
Packaging of high-power bars for optical pumping and direct applicationsFormat | Member Price | Non-Member Price |
---|---|---|
$17.00 | $21.00 |
Paper Abstract
Continuous cost reduction, improved reliability and modular platform guide the design of our next generation heatsink
and packaging process. Power scaling from a single device effectively lowers the cost, while electrical insulation of the
heatsink, low junction temperature and hard solder enable high reliability. We report on the latest results for scaling the
output power of bars for optical pumping and materials processing. The epitaxial design and geometric structures are
specific for the application, while packaging with minimum thermal impedance, low stress and low smile are generic
features. The isolated heatsink shows a thermal impedance of 0.2 K/W and the maximum output power is limited by the
requirement of a junction temperature of less than 68oC for high reliability. Low contact impedance are addressed for
drive currents of 300 A. For pumping applications, bars with a fill factor of 60% are deployed emitting more than 300 W
of output power with an efficiency of about 55% and 8 bars are arranged in a compact pump module emitting 2 kW of
collimated power suitable for pumping disk lasers. For direct applications we target coupling kilowatts of output powers
into fibers of 100 μm diameter with 0.1 NA based on dense wavelength multiplexing. Low fill factor bars with large
optical waveguide and specialized coating also emit 300 W.
Paper Details
Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 934807 (13 March 2015); doi: 10.1117/12.2080968
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
PDF: 7 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 934807 (13 March 2015); doi: 10.1117/12.2080968
Show Author Affiliations
Stefan Heinemann, TRUMPF Photonics Inc. (United States)
Haiyan An, TRUMPF Photonics Inc. (United States)
Tobias Barnowski, TRUMPF Photonics Inc. (United States)
John Jiang, TRUMPF Photonics Inc. (United States)
Viorel Negoita, TRUMPF Photonics Inc. (United States)
Haiyan An, TRUMPF Photonics Inc. (United States)
Tobias Barnowski, TRUMPF Photonics Inc. (United States)
John Jiang, TRUMPF Photonics Inc. (United States)
Viorel Negoita, TRUMPF Photonics Inc. (United States)
Robert Roff, TRUMPF Photonics (United States)
Thilo Vethake, TRUMPF Photonics Inc. (United States)
Konstantin M. Boucke, TRUMPF Photonics (United States)
Georg Treusch, TRUMPF Photonics Inc. (United States)
Thilo Vethake, TRUMPF Photonics Inc. (United States)
Konstantin M. Boucke, TRUMPF Photonics (United States)
Georg Treusch, TRUMPF Photonics Inc. (United States)
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
© SPIE. Terms of Use
