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Proceedings Paper

Band-gap engineering of III-V semiconductors by MBE using electron beam evaporation of Group III metals
Author(s): Roger J. Malik; Leda M. Lunardi; Barry F. Levine; Clyde G. Bethea; Fabio Beltram; Stephen E. Ralph; Leslie C. Hopkins; Federico Capasso
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Paper Abstract

Graded band gap ITT-V semiconductor structures have been grown by molecular beam epitaxy using electron beam evaporation of Group III metals. The deposition rates of the Group III metals are measured and controlled in real-time using Inficon Sentinel III rate monitors. The rapid response of the electron beam evaporation sources allows precise alloy grading over distances as short as 1 nm. A variety of novel 111-V device structures have been realized by this technique.

Paper Details

Date Published: 1 October 1990
PDF: 9 pages
Proc. SPIE 1285, Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors, (1 October 1990); doi: 10.1117/12.20809
Show Author Affiliations
Roger J. Malik, AT&T Bell Labs. (United States)
Leda M. Lunardi, AT&T Bell Labs. (United States)
Barry F. Levine, AT&T Bell Labs. (United States)
Clyde G. Bethea, AT&T Bell Labs. (United States)
Fabio Beltram, AT&T Bell Labs. (Italy)
Stephen E. Ralph, AT&T Bell Labs. (United States)
Leslie C. Hopkins, AT&T Bell Labs. (United States)
Federico Capasso, AT&T Bell Labs. (United States)

Published in SPIE Proceedings Vol. 1285:
Growth of Semiconductor Structures and High-Tc Thin Films on Semiconductors
Anupam Madhukar, Editor(s)

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