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Proceedings Paper

Electrical isolation of typeII InAs/InGaSb superlattices from GaSb substrates
Author(s): W. C. Mitchel; S. Elhamri; H. J. Haugan; R. Berney; Shin Mou; G. J. Brown
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Paper Abstract

We show here that n-type InAs/InGaSb superlattices can be electrically isolated from lightly doped n-type GaSb substrates at much higher temperatures than from the more common undoped p-type GaSb substrates without the use of a large band gap insulating buffer layer. Temperature dependent Hall effect measurements show superlattice conduction up to near room temperature, which is significantly higher than the 20 K observed for p-type substrates. Multi-carrier analysis of magnetic field dependent transport data demonstrate the absence of a substrate related conduction channel. We argue that the isolation is due to the depletion layer at the p-n junction between the p-type buffer layer and the n-type substrate.

Paper Details

Date Published: 8 February 2015
PDF: 6 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 937038 (8 February 2015); doi: 10.1117/12.2080847
Show Author Affiliations
W. C. Mitchel, Air Force Research Lab. (United States)
S. Elhamri, Univ. of Dayton (United States)
H. J. Haugan, Air Force Research Lab. (United States)
R. Berney, Univ. of Dayton (United States)
Shin Mou, Air Force Research Lab. (United States)
G. J. Brown, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)

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