
Proceedings Paper
Optically-pumped continuous-wave terahertz sourcesFormat | Member Price | Non-Member Price |
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Paper Abstract
Recently we have improved the efficiency and the output power of our optically pumped continuous-wave THz sources.
These sources are based on the beating of two laser lines in a wide bandwidth photodetector. Its intrinsic nonlinear
behaviour is used to produce a beatnote at the frequency difference between the two laser lines (photomixing). These
photomixers are continuously tunable THz sources working at room temperature. We have developed two kinds of
photomixers: GaAs-based for 0.8 μm pumping and InP-based for 1.5 μm pumping. On GaAs the best results has been
obtained thanks to low-temperature-grown GaAs (LTG-GaAs) photoconductors (PC). Efficiency and power were
optimized by designing a new type of thin PC placed in a Fabry-Pérot resonator. The high impedance of the PC is a wellknown
limitation of this device but with our approach it was possible to reduce its impedance by a factor 100. Moreover
by designing an impedance matching network it was possible to obtain 1.8 mW at 252 GHz with a total efficiency of 0.5
%. On InP the best results are obtained with uni-travelling-carrier photodiodes (UTC-PD). The device was improved by
designing a new heterostructure and new semi-transparent contacts with sub-wavelength apertures. The active layer was
also bonded to a silicon substrate thanks to metal thermocompression. It is demonstrated that with this approach it is
possible to obtain a power of 0.7 mW at 300 GHz with a total efficiency of 0.7 %. More generally the efficiency of
optically pumped terahertz sources will be discussed.
Paper Details
Date Published: 8 February 2015
PDF: 6 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 937008 (8 February 2015); doi: 10.1117/12.2080756
Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)
PDF: 6 pages
Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 937008 (8 February 2015); doi: 10.1117/12.2080756
Show Author Affiliations
Philipp Latzel, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Fabio Pavanello, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Emilien Peytavit, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Mohammed Zaknoune, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Fabio Pavanello, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Emilien Peytavit, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Mohammed Zaknoune, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Guillaume Ducournau, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Xavier Wallart, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Jean-François Lampin, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Xavier Wallart, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Jean-François Lampin, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Published in SPIE Proceedings Vol. 9370:
Quantum Sensing and Nanophotonic Devices XII
Manijeh Razeghi; Eric Tournié; Gail J. Brown, Editor(s)
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