Share Email Print

Proceedings Paper

Selective and tunable red- or blue-shift emissions of GaAsP quantum well heterostructures
Author(s): WeiFu Wang; Kai-Yuan Cheng; Ching-Yi Huang; Wei-Ting Liu; Bao-Hsien Wu; Yu-Chen Cheng; Kuang-Chien Hsieh
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this work we demonstrate tunable red- or blue-shift emissions of GaAs0.9P0.1 quantum well (QW) heterostructures. The wavelength shift is achieved by ampoule sealed post-growth annealing of QW with different combinations of dielectric encapsulants and in various ambient conditions. For capless bare samples sealed in ampoules with little arsenic overpressure, furnace anneals at 800°C result in red photoluminescence (PL) shifts asymptotically as much as 75 meV with anneal time up to 40 hours. We attribute this redshift to the inter-diffusion of phosphorous and arsenic in QW and the neighboring confinement layers. For samples capped with a bilayer of SrF2 and SiOx, similar temporal red shifts appear suggesting the combined dielectrics either prohibit or slow down the diffusion of column III vacancies during anneals. For samples capped with either SiOx or SiNx alone their PL spectra first shift toward longer wavelength then toward shorter wavelength. The large turn-around blue-shift (up to 165meV for 40hr annealing under 800°C) is attributed to the intermixing of Ga in QW and Al in the confinement layers. Additional complexity arises when As overpressure is replaced with Ga overpressure. For samples similarly capped with either SiOx or SiNx films, the turn-around blue-shift proceeds much faster (up to 281meV for only 5-hr annealing at 800°C). We attribute the slower blue-shift to the generation and diffusion of column III vacancies while the faster blue-shift to the kick-out of Zn-dopants in the heavily doped contact layer.

Paper Details

Date Published: 10 March 2015
PDF: 11 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821U (10 March 2015); doi: 10.1117/12.2080648
Show Author Affiliations
WeiFu Wang, National Tsing Hua Univ. (Taiwan)
Kai-Yuan Cheng, National Tsing Hua Univ. (Taiwan)
Ching-Yi Huang, National Tsing Hua Univ. (Taiwan)
Institute of Electronics Engineering (Taiwan)
Wei-Ting Liu, National Tsing Hua Univ. (Taiwan)
Bao-Hsien Wu, National Tsing Hua Univ. (Taiwan)
Yu-Chen Cheng, Union Optronics Corp. (Taiwan)
Kuang-Chien Hsieh, National Tsing Hua Univ. (Taiwan)

Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

© SPIE. Terms of Use
Back to Top
Sign in to read the full article
Create a free SPIE account to get access to
premium articles and original research
Forgot your username?