We investigated a novel design concept of index-guided tapered LDs with linearly effective-refractive-index variation to make a quality beam in 808 nm for intermediate power LDs between a few decades of mW to ~ W. In this concept, the tapered width at each position in the propagation direction varies linearly depending on change in effective-refractive-index not geometry. We use GaAsP/InGaP/InGaAlP quantum well LD structure of 808 nm and standard LD fabrication processes to test. To design a detail structure, we use the effective-refractive-index method and transfer matrix method. The tapered ridge LD with linear effective-refractive-index variation shows more stable in beam quality but needs more study to optimize the structure.

Date Published: 1 April 2015
PDF: 5 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 934813 (1 April 2015); doi: 10.1117/12.2080439

Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)