
Proceedings Paper
High reliability demonstrated on high-power and high-brightness diode lasersFormat | Member Price | Non-Member Price |
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$17.00 | $21.00 |
Paper Abstract
In this paper we present nLIGHT’s most recent reliability assessment of both the released and newly developed high
power, high brightness single emitter laser diodes for fiber laser pumps and material processing applications. We report
on the latest updates of lifetests performed on released 18W-rated diode lasers which have been successfully
incorporated into nLIGHT’s 210W 200μm/0.18NA elementTM pump module. A total of 371 units of 18W-rated single
emitters at 915 nm, were assessed at 22A and 2 A at a junction temperature, Tj~70ºC. Cumulatively, these devices have
accrued ~ 6.0 million equivalent device hours at module use conditions. The initial reliability analysis based on these
lifetest results support <99% module reliability for 2-year of continuous operation. Industry leading dollars-per-watt
elementTM e06, e12 and e18 packages based on these diode lasers are also presented. Two elementTM e18 packages have
been lifetested for <5400 hours with only one device failure so far. We also report on the initial lifetest of the newly
developed high brightness REM-diodes (Reduced Mode diodes) for new elementTM configuration. Preliminary highly
accelerated lifetest on ~15 W REM-diodes show very low failure rate compared to the control diode lasers under the
same conditions. The more optimized <15W REM-diodes have been lifetested for almost 4000h with no failures
observed so far. Superior performance has already been demonstrated on the initialelementTMe06, e12 and e18 packages
with these new REM designs, supporting a 25% increase in power with a minimal degradation in NA. Module level
reliability assessment is underway.
Paper Details
Date Published: 13 March 2015
PDF: 10 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480C (13 March 2015); doi: 10.1117/12.2080361
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
PDF: 10 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480C (13 March 2015); doi: 10.1117/12.2080361
Show Author Affiliations
L. Bao, nLIGHT Corp. (United States)
M. Kanskar, nLIGHT Corp (United States)
Mark DeVito, nLIGHT Corp. (United States)
M. Hemenway, nLIGHT Corp. (United States)
W. Urbanek, nLIGHT Corp. (United States)
M. Grimshaw, nLIGHT Corp. (United States)
M. Kanskar, nLIGHT Corp (United States)
Mark DeVito, nLIGHT Corp. (United States)
M. Hemenway, nLIGHT Corp. (United States)
W. Urbanek, nLIGHT Corp. (United States)
M. Grimshaw, nLIGHT Corp. (United States)
Z. Chen, nLIGHT Corp. (United States)
W. Dong, nLIGHT Corp. (United States)
X. Guan, nLIGHT Corp. (United States)
S. Zhang, nLIGHT Corp. (United States)
D. Dawson, nLIGHT Corp. (United States)
R. Martinsen, nLIGHT Corp. (United States)
W. Dong, nLIGHT Corp. (United States)
X. Guan, nLIGHT Corp. (United States)
S. Zhang, nLIGHT Corp. (United States)
D. Dawson, nLIGHT Corp. (United States)
R. Martinsen, nLIGHT Corp. (United States)
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
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