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Proceedings Paper

High reliability demonstrated on high-power and high-brightness diode lasers
Author(s): L. Bao; M. Kanskar; Mark DeVito; M. Hemenway; W. Urbanek; M. Grimshaw; Z. Chen; W. Dong; X. Guan; S. Zhang; D. Dawson; R. Martinsen
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Paper Abstract

In this paper we present nLIGHT’s most recent reliability assessment of both the released and newly developed high power, high brightness single emitter laser diodes for fiber laser pumps and material processing applications. We report on the latest updates of lifetests performed on released 18W-rated diode lasers which have been successfully incorporated into nLIGHT’s 210W 200μm/0.18NA elementTM pump module. A total of 371 units of 18W-rated single emitters at 915 nm, were assessed at 22A and 2 A at a junction temperature, Tj~70ºC. Cumulatively, these devices have accrued ~ 6.0 million equivalent device hours at module use conditions. The initial reliability analysis based on these lifetest results support <99% module reliability for 2-year of continuous operation. Industry leading dollars-per-watt elementTM e06, e12 and e18 packages based on these diode lasers are also presented. Two elementTM e18 packages have been lifetested for <5400 hours with only one device failure so far. We also report on the initial lifetest of the newly developed high brightness REM-diodes (Reduced Mode diodes) for new elementTM configuration. Preliminary highly accelerated lifetest on ~15 W REM-diodes show very low failure rate compared to the control diode lasers under the same conditions. The more optimized <15W REM-diodes have been lifetested for almost 4000h with no failures observed so far. Superior performance has already been demonstrated on the initialelementTMe06, e12 and e18 packages with these new REM designs, supporting a 25% increase in power with a minimal degradation in NA. Module level reliability assessment is underway.

Paper Details

Date Published: 13 March 2015
PDF: 10 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480C (13 March 2015); doi: 10.1117/12.2080361
Show Author Affiliations
L. Bao, nLIGHT Corp. (United States)
M. Kanskar, nLIGHT Corp (United States)
Mark DeVito, nLIGHT Corp. (United States)
M. Hemenway, nLIGHT Corp. (United States)
W. Urbanek, nLIGHT Corp. (United States)
M. Grimshaw, nLIGHT Corp. (United States)
Z. Chen, nLIGHT Corp. (United States)
W. Dong, nLIGHT Corp. (United States)
X. Guan, nLIGHT Corp. (United States)
S. Zhang, nLIGHT Corp. (United States)
D. Dawson, nLIGHT Corp. (United States)
R. Martinsen, nLIGHT Corp. (United States)

Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)

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