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Proceedings Paper

Indium-incorporation efficiency in semipolar (11-22) oriented InGaN-based light emitting diodes
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Paper Abstract

Reduced electric field in semipolar (1122) GaN/InGaN heterostructures makes this orientation attractive for high efficiency light emitting diodes. In this work, we investigated indium incorporation in semipolar (1122) GaN grown by metal-organic chemical vapor deposition on planar m-plane sapphire substrates. Indium content in the semipolar material was compared with that in polar c-plane samples grown under the same conditions simultaneously side by side on the same holder. The investigated samples incorporated dual GaN/InGaN/GaN double heterostructures with 3nm wide wells. In order to improve optical quality, both polar and semipolar templates were grown using an in-situ epitaxial lateral overgrowth (ELO) technique. Indium incorporation efficiency was derived from the comparison of PL spectra measured on the semipolar and polar structures at the highest excitation density, which allowed us to minimize the effect of quantum confined Stark effect on the emission wavelength. Our data suggests increased indium content in the semipolar material by up to 3.0%, from 15% In in c- GaN to 18% In in (1122) GaN.

Paper Details

Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632P (13 March 2015); doi: 10.1117/12.2080325
Show Author Affiliations
Morteza Monavarian, Virginia Commonwealth Univ. (United States)
Sebastian Metzner, Otto-von-Guericke-Univ. Magdeburg (Germany)
Natalia Izyumskaya, Virginia Commonwealth Univ. (United States)
Serdal Okur, Virginia Commonwealth Univ. (United States)
Fan Zhang, Virginia Commonwealth Univ. (United States)
Nuri Can, Virginia Commonwealth Univ. (United States)
Balikesir Üniv. (Turkey)
Saikat Das, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Ümit Özgür, Virginia Commonwealth Univ. (United States)
Frank Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
Jürgen Christen, Otto-von-Guericke-Univ. Magdeburg (Germany)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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