
Proceedings Paper
Complex emission dynamics from InGaAs/GaAs core-shell nanopillarsFormat | Member Price | Non-Member Price |
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Paper Abstract
In this work, the optical properties and emission dynamics of core-shell InGaAs/GaAs nanopillars (NPs) have been in-
vestigated using low-temperature photoluminescence (PL) and time-resolved photoluminescence (TRPL). These novel
structures have recently attracted much interest within the silicon photonics scientific community due to their potential
employment as gain medium for monolithically integrated lasers on silicon substrates. The optimization of the emission
properties of these heterostructures is essential to obtain full compatibility with silicon photonics and requires an accurate
tailoring of the pillar geometry (i.e. size, pitch) and composition. Therefore it is critical to gain deeper insight into the
optical and dynamical properties of different NP designs if optimal device performance is to be achieved. The experimental
characterization, carried out on a number of different NP structures with different geometries and compositions, shows that
the time evolution of the emission peak exhibits a strong excitation-dependent blue-shift which can be attributed to the
band-filling effect. Measured emission decay times were strongly geometry-dependent and varied from nanoseconds to
tens of picoseconds. In addition, a dramatic reduction of the decay time was observed for the highest indium concentration
due to the dominant contribution of the strain-induced non-radiative recombination processes.
Paper Details
Date Published: 27 February 2015
PDF: 6 pages
Proc. SPIE 9373, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, 93730A (27 February 2015); doi: 10.1117/12.2080269
Published in SPIE Proceedings Vol. 9373:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
Diana L. Huffaker; Holger Eisele, Editor(s)
PDF: 6 pages
Proc. SPIE 9373, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII, 93730A (27 February 2015); doi: 10.1117/12.2080269
Show Author Affiliations
Katarzyna Komolibus, Cork Institute of Technology (Ireland)
Univ. College Cork (Ireland)
Adam C. Scofield, Univ. of California, Los Angeles (United States)
Tomasz J. Ochalski, Cork Institute of Technology (Ireland)
Univ. College Cork (Ireland)
Bryan Kelleher, Cork Institute of Technology (Ireland)
Univ. College Cork (Ireland)
Adam C. Scofield, Univ. of California, Los Angeles (United States)
Tomasz J. Ochalski, Cork Institute of Technology (Ireland)
Univ. College Cork (Ireland)
Bryan Kelleher, Cork Institute of Technology (Ireland)
David Goulding, Cork Institute of Technology (Ireland)
Univ. College Cork (Ireland)
Diana L. Huffaker, Univ. of California, Los Angeles (United States)
Guillaume Huyet, Cork Institute of Technology (Ireland)
Univ. College Cork (Ireland)
National Research Univ. of Information Technologies, Mechanics and Optics (Russian Federation)
Univ. College Cork (Ireland)
Diana L. Huffaker, Univ. of California, Los Angeles (United States)
Guillaume Huyet, Cork Institute of Technology (Ireland)
Univ. College Cork (Ireland)
National Research Univ. of Information Technologies, Mechanics and Optics (Russian Federation)
Published in SPIE Proceedings Vol. 9373:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling XII
Diana L. Huffaker; Holger Eisele, Editor(s)
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