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Proceedings Paper

Strong exciton-photon coupling in hybrid InGaN-based microcavities on GaN substrates
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Paper Abstract

A 5λ-thick hybrid semiconductor/dielectric GaN-based microcavity grown by metal-organic chemical vapor deposition on a c-plane bulk GaN substrate was investigated using angle-resolved photoluminescence and angle-resolved cathodoluminescence techniques at room and low temperature (5.8 K), respectively. The cavity structure consisted of an InGaN multiple quantum well active region emitting at 400 nm and sandwiched between 29.5 pair bottom semiconductor AlN/GaN and 13.5 pair top dielectric SiO2/SiNx distributed Bragg reflectors. The cavity supported strong exciton-photon coupling with a record 75 meV vacuum Rabi splitting energy at 5.8 K. The measured room temperature Rabi splitting energy of 45 meV is still close to the highest Rabi splitting energies reported in literature confirming that the strong coupling regime still persists at room temperature.

Paper Details

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 93632O (13 March 2015); doi: 10.1117/12.2080265
Show Author Affiliations
Serdal Okur, Virginia Commonwealth Univ. (United States)
Alexander Franke, Otto-von-Guericke-Univ. Magdeburg (Germany)
Fan Zhang, Virginia Commonwealth Univ. (United States)
Vitaliy Avrutin, Virginia Commonwealth Univ. (United States)
Hadis Morkoç, Virginia Commonwealth Univ. (United States)
Frank Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
Juergen Christen, Otto-von-Guericke-Univ. Magdeburg (Germany)
Ümit Özgür, Virginia Commonwealth Univ. (United States)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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