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Proceedings Paper

Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon
Author(s): Colleen K. Shang; Robert Chen; Suyog Gupta; Yi-Chiau Huang; Yijie Huo; Errol Sanchez; Yihwan Kim; Theodore I. Kamins; Krishna C. Saraswat; James S. Harris
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Paper Abstract

Although the development of a monolithically-integrated, silicon-compatible light source has been traditionally limited by the indirect band gaps of Group IV materials, germanium-tin (Ge1-xSnx) is predicted to exhibit direct band gap behavior. In pseudomorphic conditions with materials of smaller lattice constant, the accumulation of compressive strain in Ge1-xSnx counteracts this behavior to prevent the direct band gap transition. One possible approach to compensate for this compressive strain is to introduce tensile strain into the system, which can be achieved by applying an external stressing agent to post-fabricated devices. We describe a suspended Ge0:922Sn0:078 multiple quantum well microdisk resonator cavity strained by 140 nm of highly compressively stressed silicon nitride. Raman shifts and photoluminescence redshifts indicate that an additional 0.23-0.30% strain can be induced in these microdisks with this approach. The ability to tune the optical performance of these resonator structures by strain engineering has the potential to enable the development of low threshold Ge1-xSnx-based lasers on Si.

Paper Details

Date Published: 27 February 2015
PDF: 6 pages
Proc. SPIE 9367, Silicon Photonics X, 93671P (27 February 2015); doi: 10.1117/12.2080146
Show Author Affiliations
Colleen K. Shang, Stanford Univ. (United States)
Robert Chen, Stanford Univ. (United States)
Suyog Gupta, Stanford Univ. (United States)
Yi-Chiau Huang, Applied Materials, Inc. (United States)
Yijie Huo, Stanford Univ. (United States)
Errol Sanchez, Applied Materials, Inc. (United States)
Yihwan Kim, Applied Materials, Inc. (United States)
Theodore I. Kamins, Stanford Univ. (United States)
Krishna C. Saraswat, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)

Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)

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