
Proceedings Paper
Strained germanium-tin multiple quantum well microdisk resonators towards a light source on siliconFormat | Member Price | Non-Member Price |
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Paper Abstract
Although the development of a monolithically-integrated, silicon-compatible light source has been traditionally
limited by the indirect band gaps of Group IV materials, germanium-tin (Ge1-xSnx) is predicted to exhibit direct
band gap behavior. In pseudomorphic conditions with materials of smaller lattice constant, the accumulation
of compressive strain in Ge1-xSnx counteracts this behavior to prevent the direct band gap transition. One
possible approach to compensate for this compressive strain is to introduce tensile strain into the system, which
can be achieved by applying an external stressing agent to post-fabricated devices. We describe a suspended
Ge0:922Sn0:078 multiple quantum well microdisk resonator cavity strained by 140 nm of highly compressively stressed
silicon nitride. Raman shifts and photoluminescence redshifts indicate that an additional 0.23-0.30%
strain can be induced in these microdisks with this approach. The ability to tune the optical performance of
these resonator structures by strain engineering has the potential to enable the development of low threshold
Ge1-xSnx-based lasers on Si.
Paper Details
Date Published: 27 February 2015
PDF: 6 pages
Proc. SPIE 9367, Silicon Photonics X, 93671P (27 February 2015); doi: 10.1117/12.2080146
Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)
PDF: 6 pages
Proc. SPIE 9367, Silicon Photonics X, 93671P (27 February 2015); doi: 10.1117/12.2080146
Show Author Affiliations
Colleen K. Shang, Stanford Univ. (United States)
Robert Chen, Stanford Univ. (United States)
Suyog Gupta, Stanford Univ. (United States)
Yi-Chiau Huang, Applied Materials, Inc. (United States)
Yijie Huo, Stanford Univ. (United States)
Robert Chen, Stanford Univ. (United States)
Suyog Gupta, Stanford Univ. (United States)
Yi-Chiau Huang, Applied Materials, Inc. (United States)
Yijie Huo, Stanford Univ. (United States)
Errol Sanchez, Applied Materials, Inc. (United States)
Yihwan Kim, Applied Materials, Inc. (United States)
Theodore I. Kamins, Stanford Univ. (United States)
Krishna C. Saraswat, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)
Yihwan Kim, Applied Materials, Inc. (United States)
Theodore I. Kamins, Stanford Univ. (United States)
Krishna C. Saraswat, Stanford Univ. (United States)
James S. Harris, Stanford Univ. (United States)
Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)
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