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Proceedings Paper

Trapping processes related to iron and carbon doping in AlGaN/GaN power HEMTs
Author(s): M. Meneghini; D. Bisi; I. Rossetto; Carlo De Santi; Antonio Stocco; O. Hilt; E. Bahat-Treidel; J. Wuerfl; F. Rampazzo; G. Meneghesso; E. Zanoni
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Paper Abstract

This paper reviews our recent results on the impact of iron and carbon compensation on the dynamic performance of GaN-HEMTs; based on pulsed and transient characterization, we demonstrate that: (i) the use of Fe-doping may lead to a significant current collapse, due to the presence of a trap with activation energy Ea=0.6eV. We discuss the properties of this trap and its physical origin; (ii) high C-doping levels may favor dynamic Ron increase, due to the presence of a trap level located at Ev+0.84 eV. The effect of this trap can be significantly reduced through the use of a double heterostructure.

Paper Details

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936314 (13 March 2015); doi: 10.1117/12.2079586
Show Author Affiliations
M. Meneghini, Univ. degli Studi di Padova (Italy)
D. Bisi, Univ. degli Studi di Padova (Italy)
I. Rossetto, Univ. degli Studi di Padova (Italy)
Carlo De Santi, Univ. degli Studi di Padova (Italy)
Antonio Stocco, Univ. degli Studi di Padova (Italy)
O. Hilt, Ferdinand-Braun-Institut (Germany)
E. Bahat-Treidel, Ferdinand-Braun-Institut (Germany)
J. Wuerfl, Ferdinand-Braun-Institut (Germany)
F. Rampazzo, Univ. degli Studi di Padova (Italy)
G. Meneghesso, Univ. degli Studi di Padova (Italy)
E. Zanoni, Univ. degli Studi di Padova (Italy)


Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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