This paper reviews our recent results on the impact of iron and carbon compensation on the dynamic performance of GaN-HEMTs; based on pulsed and transient characterization, we demonstrate that: (i) the use of Fe-doping may lead to a significant current collapse, due to the presence of a trap with activation energy Ea=0.6eV. We discuss the properties of this trap and its physical origin; (ii) high C-doping levels may favor dynamic Ron increase, due to the presence of a trap level located at Ev+0.84 eV. The effect of this trap can be significantly reduced through the use of a double heterostructure.

Date Published: 13 March 2015
PDF: 7 pages
Proc. SPIE 9363, Gallium Nitride Materials and Devices X, 936314 (13 March 2015); doi: 10.1117/12.2079586

Published in SPIE Proceedings Vol. 9363:
Gallium Nitride Materials and Devices X
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)