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Proceedings Paper

Temperature-dependent study of Si-based GeSn photoconductors
Author(s): Thach Pham; Wei Du; Joe Margetis; Seyed Amir Ghetmiri; Aboozar Mosleh; Greg Sun; Richard A. Soref; John Tolle; Hameed A. Naseem; Baohua Li; Shui-Qing Yu
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Paper Abstract

Si based Ge1-xSnx photoconductors, with Sn incorporation of 0.9, 3.2, and 7%, were fabricated using a CMOS-compatible process. Temperature dependent study was conducted from 300 to 77 K. The first generation device (standard photoconductor, PD) shows long wavelength cut-off beyond 2.1 μm for 7%-Sn devices at room temperature. The peak responsivity and D* of the 7% Sn device at 1.55 μm were obtained at 77K as 0.08 A/W and 1×109 cm*Hz1/2*W-1, respectively. Improved responsivity and specific detectivity (D*) were observed on second generation devices by a newly designed electrode structure (photoconductor with interdigitated electrodes, IEPD). The enhancement factor of responsivity was up to 15 at 77 K.

Paper Details

Date Published: 27 February 2015
PDF: 5 pages
Proc. SPIE 9367, Silicon Photonics X, 93670S (27 February 2015); doi: 10.1117/12.2079580
Show Author Affiliations
Thach Pham, Univ. of Arkansas (United States)
Wei Du, Univ. of Arkansas (United States)
Joe Margetis, ASM America Inc. (United States)
Seyed Amir Ghetmiri, Univ. of Arkansas (United States)
Aboozar Mosleh, Univ. of Arkansas (United States)
Greg Sun, Univ. of Massachusetts Boston (United States)
Richard A. Soref, Univ. of Massachusetts Boston (United States)
John Tolle, ASM America Inc. (United States)
Hameed A. Naseem, Univ. of Arkansas (United States)
Baohua Li, Arktronics, LLC (United States)
Shui-Qing Yu, Univ. of Arkansas (United States)

Published in SPIE Proceedings Vol. 9367:
Silicon Photonics X
Graham T. Reed; Michael R. Watts, Editor(s)

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