An front facet-low reflection coated broad-area laser(BAL) diode with an emitter size of 50 μm x 1 μm and a chip length of 2000 μm is operated in the external cavity diode laser(ECDL). For wavelength stabilization and narrow spectral width, the diffraction grating is used in a Littrow configuration. At an injection current of 1.5 A, a output power of 0.65 W with a slop efficiency of 0.85 A/W, which is comparable to those of a solitary BAL diode, could be achieved with a spectral width of 120pm which is about 77 % narrower as compared to a solitary BAL diode. The peak wavelength stability below 10 pm was obtained in the wide range of output power up to 0.65 W.

Date Published: 1 April 2015
PDF: 6 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 93480R (1 April 2015); doi: 10.1117/12.2079456

Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)