
Proceedings Paper
Low-NA fiber laser pumps powered by high-brightness single emittersFormat | Member Price | Non-Member Price |
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$17.00 | $21.00 |
Paper Abstract
Fiber laser manufacturers demand high-brightness laser diode pumps delivering optical pump energy in both a compact
fiber core and narrow angular content. A pump delivery fiber of a 105 μm core and 0.22 numerical aperture (NA) is
typically used, where the fiber NA is under-filled to ease the launch of laser diode emission into the fiber and make the
fiber tolerant to bending. At SCD, we have developed high-brightness NEON multi-emitter fiber-coupled pump modules
that deliver 50 W output from a 105 μm, 0.15 NA fiber enabling low-NA power delivery to a customer’s fiber laser
network.
Brightness-enhanced single emitters are engineered with ultra-low divergence for compatibility with the low-NA
delivery fiber, with the latest emitters delivering 14 W with 95% of the slow-axis energy contained within an NA of
0.09. The reduced slow-axis divergence is achieved with an optimized epitaxial design, where the peak optical intensity
is reduced to both lessen filamentation within the laser cavity and reduce the power density on the output facet thus
increasing the emitter reliability.
The low mode filling of the fiber allows it to be coiled with diameters down to 70 mm at full operating power despite the
small NA and further eliminates the need for mode-stripping at fiber combiners and splices downstream from our pump
modules. 50W fiber pump products at 915, 950 and 975 nm wavelengths are presented, including a wavelengthstabilized
version at 976 nm.
Paper Details
Date Published: 13 March 2015
PDF: 11 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 934806 (13 March 2015); doi: 10.1117/12.2079422
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
PDF: 11 pages
Proc. SPIE 9348, High-Power Diode Laser Technology and Applications XIII, 934806 (13 March 2015); doi: 10.1117/12.2079422
Show Author Affiliations
Dan Yanson, SCD SemiConductor Devices (Israel)
Moshe Levy, SCD SemiConductor Devices (Israel)
Ophir Peleg, SCD SemiConductor Devices (Israel)
Noam Rappaport, SCD SemiConductor Devices (Israel)
Moshe Shamay, SCD SemiConductor Devices (Israel)
Moshe Levy, SCD SemiConductor Devices (Israel)
Ophir Peleg, SCD SemiConductor Devices (Israel)
Noam Rappaport, SCD SemiConductor Devices (Israel)
Moshe Shamay, SCD SemiConductor Devices (Israel)
Nir Dahan, SCD SemiConductor Devices (Israel)
Genady Klumel, SCD SemiConductor Devices (Israel)
Yuri Berk, SCD SemiConductor Devices (Israel)
Ilya Baskin, SCD SemiConductor Devices (Israel)
Genady Klumel, SCD SemiConductor Devices (Israel)
Yuri Berk, SCD SemiConductor Devices (Israel)
Ilya Baskin, SCD SemiConductor Devices (Israel)
Published in SPIE Proceedings Vol. 9348:
High-Power Diode Laser Technology and Applications XIII
Mark S. Zediker, Editor(s)
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