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Proceedings Paper

Recent advances in the research toward graphene-based terahertz lasers
Author(s): Taiichi Otsuji; Akira Satou; Takayuki Watanabe; Stephane A. Boubanga-Tombet; Maxim Ryzhii; Alexander A. Dubinov; Vyacheslav V. Popov; Vladimir Mitin; Michael Shur; Victor Ryzhii
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Paper Abstract

This paper reviews recent advances in the research and development toward the graphene-based terahertz (THz) lasers. Mass-less Dirac Fermions of electrons and holes in gapless and linear symmetric band structures in graphene enable a gain in a wide THz frequency range under optical or electrical pumping. The excitation of the surface plasmon polaritons in the population-inverted graphene dramatically enhances the THz gain. Photon-emission-assisted resonant tunneling in a double-graphene-layered nano-capacitor structure also strongly enhances the THz gain. Novel graphene-based heterostructures using these physical mechanisms for the current-injection driven THz lasing are discussed. Their superior gain-spectral properties are analyzed and the laser cavity structures for the graphene THz laser implementation are discussed.

Paper Details

Date Published: 10 March 2015
PDF: 10 pages
Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 938219 (10 March 2015); doi: 10.1117/12.2079411
Show Author Affiliations
Taiichi Otsuji, Tohoku Univ. (Japan)
Akira Satou, Tohoku Univ. (Japan)
Takayuki Watanabe, Tohoku Univ. (Japan)
Stephane A. Boubanga-Tombet, Tohoku Univ. (Japan)
Maxim Ryzhii, Univ. of Aizu (Japan)
Alexander A. Dubinov, Institute for Physics of Microstructures (Russian Federation)
Lobachevsky State Univ. (Russian Federation)
Vyacheslav V. Popov, Institute of Radio Engineering and Electronics (Russian Federation)
Vladimir Mitin, Univ. at Buffalo (United States)
Michael Shur, Rensselaer Polytechnic Institute (United States)
Victor Ryzhii, Tohoku Univ. (Japan)

Published in SPIE Proceedings Vol. 9382:
Novel In-Plane Semiconductor Lasers XIV
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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