We present a study of the transient onset of lasing and ultrashort pulse formation in a 1-μm InGaAs/GaAs quantum well (QW) vertical-external-cavity surface-emitting laser (VECSEL) that is mode-locked using an intracavity semiconductor saturable absorber mirror. The intra-cavity power build-up transient is observed following modulation of the laser mode in the cavity. Measuring the rise of the frequency-doubled laser output with respect to the fundamental allows determination of mode-locking onset times and pulse-shortening per round trip. A grating monochromator has been used to resolve the optical spectrum of the fundamental intracavity radiation during pulse formation. Combining both measurements we can begin to provide a comprehensive description of pulse formation in VECSELs.

Date Published: 4 March 2015
PDF: 11 pages
Proc. SPIE 9349, Vertical External Cavity Surface Emitting Lasers (VECSELs) V, 93490I (4 March 2015); doi: 10.1117/12.2079292

Published in SPIE Proceedings Vol. 9349:
Vertical External Cavity Surface Emitting Lasers (VECSELs) V
Mircea Guina, Editor(s)