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Proceedings Paper

The impact of time-varying phosphorus doping on ZnMgO thin films and achievement of dominant acceptor-bound-exciton peak
Author(s): Shantanu Saha; S. Nagar; S. K. Gupta; S. Chakrabarti
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Paper Abstract

ZnO is a highly efficient and promising semiconductor material because of its large bandgap (3.37 eV) and exciton binding energy (60 meV). MgO also has a very high bandgap (7.8 eV), and the incorporation of Mg into ZnO can result in an alloy with a bandgap of more than 4 eV . We used plasma immersion ion implantation to dope phosphorus into Zn0.85Mg0.15O for achieving p-type ZnMgO. RF sputtering was used to deposit ZnMgO on a Si substrate. Phosphorus doping was conducted from 10 s to 70 s. Rapid thermal annealing of the samples was performed to remove any implantation defects. A highly dominant acceptor-bound-exciton peak was observed at 3.36 eV by photoluminescence measurements, which continued to dominate from low temperature to room temperature. Donor-bound acceptor and free-electron acceptor peaks were also observed at 3.24 eV and 3.28 eV, respectively.

Paper Details

Date Published: 13 March 2015
PDF: 6 pages
Proc. SPIE 9364, Oxide-based Materials and Devices VI, 93640U (13 March 2015); doi: 10.1117/12.2079186
Show Author Affiliations
Shantanu Saha, Indian Institute of Technology Bombay (India)
S. Nagar, Indian Institute of Technology Bombay (India)
S. K. Gupta, Bhabha Atomic Research Ctr. (India)
S. Chakrabarti, Indian Institute of Technology Bombay (India)

Published in SPIE Proceedings Vol. 9364:
Oxide-based Materials and Devices VI
Ferechteh H. Teherani; David C. Look; David J. Rogers, Editor(s)

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